10-Gb/s strained MQW DFB-LD transmitter module and superlattice APD receiver module using GaAs MESFET IC´s

This paper describes the design and performance of a 10-Gb/s laser diode (LD) transmitter and avalanche photodiode (APD) receiver, both of which are based on GaAs MESFET IC´s. The LD transmitter consists of a strained MQW distributed-feedback LD and one chip LD driver IC. The module output power is +4.6 dBm at 10 Gb/s. The APD receiver consists of an InGaAsP/InAl/As superlattice-APD and an IC-preamplifier with the 10-Gb/s receiver sensitivity of -27.4 dBm. As for the LD transmitter, we discuss the optimum impedance-matching design from the viewpoint of high-speed interconnection between LD and driver IC´s. As for the APD receiver, the key issue is input impedance design of preamplifier IC, considering noise and bandwidth characteristics. Total performance of the transmitter and receiver is verified by a 10-Gb/s transmission experiment and a penalty-free 10-Gb/s fiber-optic link over 80 km of conventional single-mode fiber is successfully achieved