DocumentCode :
123076
Title :
Design of radiation hardened wide tuning range CMOS oscillators
Author :
Jagtap, Sachin ; Sivaramakrishna, R. ; Gupta, Swastik
Author_Institution :
Indian Inst. of Technol. Bombay, Mumbai, India
fYear :
2014
fDate :
3-5 March 2014
Firstpage :
224
Lastpage :
229
Abstract :
CMOS integrated circuits are prone to hazards such as Single Event Transients (SETs) caused by radiation strikes in high energy radiation environments. For synthesis of high frequency signals for circuits used in such environments, we propose use of quadrature phase LC oscillators. In addition to providing higher tolerance to SETs, these oscillators are also able to provide wider tuning range, which is otherwise difficult to achieve for high frequencies, particularly with low phase noise LC oscillators. Further improvement in the radiation tolerance is provided by addition of parallel capacitors and series resistors in tail current path. Simulation results shown 64% reduction in worst case phase offsets caused by radiation strikes generating 100 fC charge and about 20% improvement in tuning range for 14 GHz LC oscillators.
Keywords :
CMOS analogue integrated circuits; microwave integrated circuits; microwave oscillators; radiation hardening (electronics); CMOS integrated circuits; SET; frequency 14 GHz; high energy radiation environments; high frequency signal synthesis; low phase noise LC oscillators; parallel capacitors; quadrature phase LC oscillators; radiation hardened wide tuning range CMOS oscillators; radiation strikes; radiation tolerance improvement; series resistors; single event transients; tail current path; worst case phase offsets; Capacitors; Phase noise; Resistors; Transistors; Tuning; Voltage-controlled oscillators; Radiation effects; Radiation hardening by design; Voltage controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality Electronic Design (ISQED), 2014 15th International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4799-3945-9
Type :
conf
DOI :
10.1109/ISQED.2014.6783329
Filename :
6783329
Link To Document :
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