Title :
Polarisation-dependent optical gain in ridge-waveguide laser diodes
Author :
Stegmuller, B. ; Amann, M.-C.
Author_Institution :
Siemens AG Res. Labs., Munich, West Germany
Abstract :
The polarisation dependence of the optical gain in quasi-index-guided, lambda =1.3 mu m, GaInAsP-InP, metal-clad, ridge-waveguide laser diodes is demonstrated. It is shown experimentally that, depending on the lateral waveguiding, either the TE or the TM-polarised mode is favoured. By appropriate design of the laser structure, almost polarisation-independent internal optical gain has been experimentally achieved.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; laser transitions; light polarisation; optical communication equipment; optical waveguides; semiconductor junction lasers; 1.3 micron; GaInAsP-InP; III-V semiconductors; TE polarised mode; TM-polarised mode; lateral waveguiding; metal-clad; optical communications light source; optical gain; polarisation dependence; polarisation-independent internal optical gain; quasi-index-guided; quasiindex guided structure; ridge-waveguide laser diodes; semiconductor lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890680
