• DocumentCode
    1231486
  • Title

    Realistic Nanotube-Metal Contact Configuration for Molecular Electronics Applications

  • Author

    Andriotis, Antonis ; Menon, Madhu ; Gibson, Heather

  • Author_Institution
    Inst. of Electron. Struct. & Laser, Found. for Res. & Technol.-Hellas, Heraklion
  • Volume
    8
  • Issue
    6
  • fYear
    2008
  • fDate
    6/1/2008 12:00:00 AM
  • Firstpage
    910
  • Lastpage
    913
  • Abstract
    A realistic single-wall carbon nanotube (SWCN)-metal contact configuration is obtained using a tight-binding molecular dynamics method incorporating full consideration of s, p, and d basis sets for carbon and metal atoms. The full structural relaxation of the combined SWCN and metal system is found to be essential for realistic characterization of conductivity. More importantly, convergence with respect to the number of the metal lead (ML) atoms in contact with the SWCN is found to be even more critical. Our results indicate that, in order to maximize device efficiency, one needs to use ML-SWCN systems with a minimal ML-SWCN contact-width to SWCN-length ratio.
  • Keywords
    carbon nanotubes; electrical conductivity; lead; molecular electronics; ML-SWCN systems; SWCN-metal contact configuration; carbon atoms; conductivity; metal atoms; metal lead atoms; metal system; molecular electronics applications; realistic nanotube-metal contact configuration; realistic single-wall carbon nanotube; tight-binding molecular dynamics; Carbon nanotubes; Conductivity; Convergence; Electrons; Lead; Molecular electronics; Multilevel systems; Nanotechnology; Schottky barriers; Wires; Contact resistance; nanotechnology; quantum wires; resonant tunneling devices;
  • fLanguage
    English
  • Journal_Title
    Sensors Journal, IEEE
  • Publisher
    ieee
  • ISSN
    1530-437X
  • Type

    jour

  • DOI
    10.1109/JSEN.2008.923926
  • Filename
    4529164