DocumentCode :
1231517
Title :
III-Nitride Heterostructure Layered Tunnel Barriers For a Tunable Hyperspectral Detector
Author :
Bell, L. Douglas ; Tripathi, Neeraj ; Grandusky, J.R. ; Jindal, Vibhu ; Shahedipour-Sandvik, F. Shadi
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA
Volume :
8
Issue :
6
fYear :
2008
fDate :
6/1/2008 12:00:00 AM
Firstpage :
724
Lastpage :
729
Abstract :
We report on the fabrication and characterization of Ill-nitride layered tunnel barriers with applications for a new type of tunable hyperspectral imaging detector with intrinsically hyperspectral pixels. This would enable each pixel to be individually tunable in real-time through a range of wavelengths, with the number and width of spectral channels being dynamically adjustable. Shape-engineered electron barriers fabricated from III-nitride heterostructures allow barrier height to be varied by application of a voltage. A spectroscopy of photon wavelength is enabled via the collection of photoexcited electrons across this barrier. The device is envisioned for tunable detection of ultraviolet through infrared wavelengths.
Keywords :
III-V semiconductors; infrared detectors; semiconductor heterojunctions; ultraviolet detectors; III-nitride heterostructure layered tunnel barriers; infrared wavelengths; intrinsically hyperspectral pixels; photoexcited electrons; shape-engineered electron barriers; spectral channels; tunable hyperspectral imaging detector; ultraviolet wavelengths; Chemical analysis; Detectors; Dielectric materials; Electrons; Hyperspectral imaging; Pixel; Sensor arrays; Spectroscopy; Terrestrial atmosphere; Voltage; Dielectric films; transducers; tunneling; ultraviolet detectors;
fLanguage :
English
Journal_Title :
Sensors Journal, IEEE
Publisher :
ieee
ISSN :
1530-437X
Type :
jour
DOI :
10.1109/JSEN.2008.923180
Filename :
4529167
Link To Document :
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