Title :
Monolithic micropower amplifier using SiGe n-MODFET device
Author :
Vilches, Antonio ; Fobelets, K. ; Michelakis, K. ; Despotopoulos, S. ; Papavassiliou, C. ; Hackbarth, Thomas ; König, U.
Author_Institution :
Dept. of Electr. & Electron. Eng., Imperial Coll. London, UK
fDate :
6/12/2003 12:00:00 AM
Abstract :
A micropower-relevant model is extracted from the DC characteristics of an n-type buried channel Si/SiGe hetero-junction modulation doped FET (HMODFET). This model is then used to design a novel monolithic SiGe single-stage class-A power amplifier for micropower operation (sub 500 μW). The amplifier is fabricated and measured data of the power-gain against operating power are presented for the first time.
Keywords :
Ge-Si alloys; HEMT integrated circuits; MMIC amplifiers; elemental semiconductors; low-power electronics; semiconductor materials; silicon; 0 to 500 muW; DC characteristics; HMODFET; Si-SiGe; Si/SiGe; high-frequency transistor; micropower-relevant model; monolithic micropower amplifier; n-MODFET device; n-type buried channel hetero-junction modulation doped FET; operating power; power-gain; single-stage class-A power amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030581
