DocumentCode :
1231598
Title :
Low-Power Amplifier-Discriminators for High Time Resolution Detection
Author :
Despeisse, Matthieu ; Jarron, Pierre ; Anghinolfi, Francis ; Tiuraniemi, Sakari ; Osmic, Fadmar ; Riedler, Petra ; Kluge, Alexander ; Ceccucci, Augusto
Author_Institution :
Eur. Organ. for Nucl. Res. (CERN), Geneva
Volume :
56
Issue :
2
fYear :
2009
fDate :
4/1/2009 12:00:00 AM
Firstpage :
375
Lastpage :
381
Abstract :
Low-power amplifier-discriminators based on a so-called NINO architecture have been developed with high time resolution for the readout of radiation detectors. Two different circuits were integrated in the NINO13 chip, processed in IBM 130 nm CMOS technology. The LCO version (Low Capacitance and consumption Optimization) was designed for potential use as front-end electronics in the Gigatracker of the NA62 experiment at CERN. It was developed as pixel readout for solid-state pixel detectors to permit minimum ionizing particle detection with less than 180 ps rms resolution per pixel on the output pulse, for power consumption below 300 muW per pixel. The HCO version (High Capacitance Optimization) was designed with 4 mW power consumption per channel to provide timing resolution below 20 ps rms on the output pulse, for charges above 10 fC. Results presented show the potential of the LCO and HCO circuits for the precise timing readout of solid-state detectors, vacuum tubes or gas detectors, for applications in high energy physics, bio-technologies or medical imaging.
Keywords :
CMOS integrated circuits; amplifiers; capacitance; low-power electronics; nuclear electronics; position sensitive particle detectors; readout electronics; silicon radiation detectors; CERN; CMOS technology; HCO circuits; LCO circuits; NA62 experiment; NINO13 chip; front-end electronics; gas detectors; high capacitance optimization; high time resolution detection; ionizing particle detection; low capacitance and consumption optimization; low-power amplifier-discriminators; radiation detectors; readout electronics; silicon sensor; solid-state pixel detectors; vacuum tubes; CMOS process; CMOS technology; Capacitance; Design optimization; Energy consumption; Energy resolution; Integrated circuit technology; Radiation detectors; Solid state circuits; Timing; CMOS circuits; detector instrumentation; fluorescence spectroscopy; high energy physics instrumentation; photodetectors;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2009.2013350
Filename :
4812299
Link To Document :
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