DocumentCode :
1231608
Title :
Robust Negative Differential Conductance and Enhanced Shot Noise in Transport Through a Molecular Transistor With Vibration Assistance
Author :
Dong, Bing ; Lei, X.L. ; Horing, N. J M
Author_Institution :
Dept. of Phys., Shanghai Jiaotong Univ., Shanghai
Volume :
8
Issue :
6
fYear :
2008
fDate :
6/1/2008 12:00:00 AM
Firstpage :
885
Lastpage :
890
Abstract :
In this paper, we analyze vibration-assisted sequential tunneling (including current-voltage characteristics and zero-frequency shot noise) through a molecular quantum dot with two electronic orbitals asymmetrically coupled to the internal vibration. We employ rate equations for the case of equilibrated phonons, and strong Coulomb blockade. We find that a system with a strongly phonon-coupled ground state orbital and weakly phonon-coupled excited state orbital exhibits strong negative differential conductance; and it also shows super-Poissonian current noise. We discuss in detail the reasons and conditions for the appearance of negative differential conductance.
Keywords :
Coulomb blockade; electric admittance; molecular electronics; quantum interference devices; semiconductor quantum dots; transistors; Coulomb blockade; current-voltage characteristics; enhanced shot noise; equilibrated phonons; molecular quantum dot; molecular transistor; negative differential conductance; phonon-coupled ground state orbital; robust negative differential conductance; super-Poissonian current noise; vibration assistance; vibration-assisted sequential tunneling; zero-frequency shot noise; Current-voltage characteristics; Electrodes; Equations; Noise robustness; Phonons; Physics; Quantum dots; Sensor systems; Tunneling; Vibrations; Negative differential conductance; super-Poissonian shot noise; vibration-assisted tunneling;
fLanguage :
English
Journal_Title :
Sensors Journal, IEEE
Publisher :
ieee
ISSN :
1530-437X
Type :
jour
DOI :
10.1109/JSEN.2008.923271
Filename :
4529177
Link To Document :
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