Title :
Over 40 Gbit/s 16:1 multiplexer IC using InP/InGaAs HBT technology
Author :
Ishii, K. ; Nakajima, H. ; Nosaka, H. ; Ida, M. ; Kurishima, K. ; Yamahata, S. ; Enoki, T. ; Shibata, T.
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi, Japan
fDate :
6/12/2003 12:00:00 AM
Abstract :
A low-power 16:1 multiplexer (MUX) IC using undoped-emitter InP/InGaAs heterojunction bipolar transistors (HBTs) has been successfully designed and fabricated. To minimise power consumption, the collector current density of each HBT was optimised taking into account the required operating speed and the number of fan-outs. Up to 47 Gbit/s error-free operation was confirmed with low power consumption of about 3.2 W. These results demonstrate that InP/InGaAs HBT technology is attractive for fabricating over 40 Gbit/s, low-power medium-scale-integration (MSI) circuits.
Keywords :
III-V semiconductors; bipolar digital integrated circuits; gallium arsenide; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; low-power electronics; multiplexing equipment; 3.2 W; 40 Gbit/s; InP-InGaAs; InP/InGaAs HBT technology; MSI circuits; collector current density optimisation; heterojunction bipolar transistors; low-power multiplexer; medium-scale-integration circuits; multiplexer IC;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030596
