GaAs MESFET modeling and nonlinear CAD

Author

Curtice, Walter R.

Author_Institution

Microwave Semicond. Corp., Somerset, NJ, USA

Volume

36

Issue

2

fYear

1988

fDate

2/1/1988 12:00:00 AM

Firstpage

220

Lastpage

230

Abstract

Equivalent circuit modeling techniques are described for both small-signal and large-signal models of GaAs MESFETs. The use of large-signal model in an interactive program for amplifier analysis is shown. The computed load-pull results and IMD (intermodulation distortion) predictions are shown to be in good agreement with measured data at 10 GHz

Keywords

III-V semiconductors; Schottky gate field effect transistors; circuit CAD; circuit analysis computing; gallium arsenide; nonlinear network analysis; nonlinear network synthesis; semiconductor device models; solid-state microwave circuits; solid-state microwave devices; GaAs; III-V semiconductors; IMD predictions; MESFET modeling; amplifier analysis; computer aided design; equivalent circuits; interactive program; intermodulation distortion; large-signal models; load-pull results; microwave devices; nonlinear CAD; small signal models; Design automation; Distortion measurement; Equivalent circuits; FETs; Gallium arsenide; Intermodulation distortion; MESFET circuits; MESFETs; Microwave devices; Microwave technology; Microwave theory and techniques; Scattering parameters; Semiconductor device measurement;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.3509

Filename

3509