• DocumentCode
    1231737
  • Title

    High-power, 4 W pulsed, grating-coupled surface-emitting laser

  • Author

    Welch, D.F. ; Parke, R. ; Hardy, A. ; Waarts, R. ; Streifer, W. ; Scifres, D.R.

  • Author_Institution
    Spectra Diode Labs., San Jose, CA, USA
  • Volume
    25
  • Issue
    16
  • fYear
    1989
  • Firstpage
    1038
  • Lastpage
    1039
  • Abstract
    AlGaAs surface-emitting lasers fabricated with second-order grating, distributed Bragg reflector regions for output coupling and feedback are demonstrated to operate at high output powers. Powers of 1.75 and 4 W pulsed are reported for single gain section and three gain section lasers.
  • Keywords
    III-V semiconductors; aluminium compounds; diffraction gratings; distributed Bragg reflector lasers; gallium arsenide; integrated optics; optical waveguides; semiconductor junction lasers; 1.75 W; 4 W; AlGaAs; DBR laser; III-V semiconductors; distributed Bragg reflector regions; double quantum well active regions; feedback; high output powers; integrated optics; output coupling; second-order grating; semiconductor laser; single gain section; surface-emitting laser; three gain section lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890693
  • Filename
    35090