• DocumentCode
    1231786
  • Title

    Very high gain AlGaAs/GaAs pnp heterojunction bipolar transistor

  • Author

    Najjar, F.E. ; Enquist, P.M. ; Slater, D.B. ; Chen, M.Y. ; Lind, K.J.

  • Author_Institution
    Research Triangle Inst., Research Triangle Park, NC, USA
  • Volume
    25
  • Issue
    16
  • fYear
    1989
  • Firstpage
    1047
  • Lastpage
    1048
  • Abstract
    The effect of the emitter Al mole fraction and emitter-base junction type on the performance of AlGaAs/GaAs pnp heterojunction transistors was investigated experimentally. A current gain as high as 1360 was obtained for a structure with an Al0.4Ga0.6As emitter and compositionally abrupt emitter-base junction; this was attributed to reduced surface recombination.
  • Keywords
    III-V semiconductors; aluminium compounds; electron-hole recombination; gallium arsenide; heterojunction bipolar transistors; Al 0.4Ga 0.6As emitter; AlGaAs-GaAs; HBT; III-V semiconductors; compositionally abrupt junction; current gain; emitter Al mole fraction; emitter-base junction type; heterojunction bipolar transistor; high gain type; p-n-p device; performance study; surface recombination-reduction;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890699
  • Filename
    35096
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1231786