• DocumentCode
    1231806
  • Title

    Polarisation-independent optical amplifier with buried facets

  • Author

    Olsson, N.A. ; Kazarinov, R.F. ; Nordland, W.A. ; Henry, C.H. ; Oberg, M.G. ; White, H.G. ; Garbinski, P.A. ; Savage, A.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • Volume
    25
  • Issue
    16
  • fYear
    1989
  • Firstpage
    1048
  • Lastpage
    1049
  • Abstract
    A polarisation-insensitive GaInAsP/InP laser amplifier with thick active layer and buried facets has been fabricated. The TE and TM gains are equal to within 1 dB at all drive currents and wavelengths.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; GaInAsP-InP; TM gains; buried facets; drive currents; laser amplifier; thick active layer;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890700
  • Filename
    35097
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1231806