Epitaxial growth of metallic ErP, ErSb and lattice-matched ErPxSb(1-x) layers on

ErP and ErSb compounds have been demonstrated to have metallic behaviour ( rho _ErP=150 mu Omega cm; rho _ErSb=60 mu Omega cm). The authors show that they can be epitaxially grown on InP and GaAs in an MBE system and that many matched systems (metallic layer)/(III-V semiconductor) can be built using ternary compounds of rare-earth and V elements.