A large-signal, analytic model for the GaAs MESFET

Author

Khatibzadeh, M.A. ; Trew, Ani Robert J

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA

Volume

36

Issue

2

fYear

1988

fDate

2/1/1988 12:00:00 AM

Firstpage

231

Lastpage

238

Abstract

An analytic, large-signal model for the GaAs MESFET is presented. The device model is physics-based and describes the conduction and displacement currents of the FET as a function of instantaneous terminal voltages and their time derivatives. The model allows arbitrary doping profiles in the channel and is thus suitable for the optimization of ion-implanted and buried-channel FETs. It also accounts for charge accumulation in the conducting channel at high electric fields and the associated capacitance in a self-consistent manner. Theoretical predictions of the model are correlated with experimental data on X -band power FETs and excellent agreement is obtained

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; solid-state microwave devices; GaAs; III-V semiconductors; X-band power FETs; analytic model; arbitrary doping profiles; buried-channel FETs; capacitance; charge accumulation; conducting channel; displacement currents; high electric fields; instantaneous terminal voltages; ion implanted FET; large-signal model; microwave device; optimization; Capacitance; Circuit simulation; Computational modeling; Design automation; Doping profiles; FETs; Gallium arsenide; MESFETs; MMICs; Numerical models; Predictive models; Radio frequency; Semiconductor process modeling; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.3510

Filename

3510