Title :
Combination of JFET and MOSFET devices in 4H-SiC for high-temperature stable circuit operation
Author :
Koo, Sang-Mo ; Zetterling, C.-M. ; Lee, Hyung-Seok ; Ostling, M.
Author_Institution :
Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol., Stockholm, Sweden
fDate :
6/12/2003 12:00:00 AM
Abstract :
A novel combination of junction-gated and metal-oxide-semiconductor field effect transistor (JMOSFET) has been fabricated and characterised in 4H-SiC. The high-temperature stable operation of JMOSFETs has been explored in terms of constant current levels. The JMOSFETs have shown the feasibility for operating with constant on and off current levels from room temperature up to 300°C. Another advantage of this device is the improved current density by accumulation of the MOS n-channel.
Keywords :
MOSFET; circuit stability; current density; field effect transistors; high-temperature electronics; junction gate field effect transistors; silicon compounds; wide band gap semiconductors; 300 C; 4H-SiC; JMOSFETs; MOS n-channel accumulation; SiC; combined JFET/MOSFET device; current density; high-temperature stable operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030606
