Title :
Charge-sensitive preamplifier for integration on silicon radiation detectors: first experimental results
Author :
Rehak, P. ; Rescia, S. ; Radeka, Veljko ; Gatti, Emilio ; Longoni, A. ; Sampietro, Marco ; Bertuccio, G. ; Kemmer, J. ; Prechtel, V.
Author_Institution :
Brookhaven Nat. Lab., Upton, NY, USA
Abstract :
The first implementation of a charge-sensitive preamplifier integrated on a fully depleted, high-resistivity silicon wafer and first results about its performance are reported. The preamplifier is based on a new type of implanted n-channel JFET, and it is implemented by the same process as for fully depleted silicon radiation detectors.
Keywords :
elemental semiconductors; junction gate field effect transistors; preamplifiers; semiconductor counters; silicon; Si; charge-sensitive preamplifier; fully-depleted wafer; implanted n-channel JFET; radiation detectors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890706
