Title :
Development of key components for SIMOX intelligent power LSIs
Author :
Ohno, Tetsufumi ; Matsumoto, Shinichi ; Izumi, Kiyotaka
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
Abstract :
High and low-voltage CMOS/SIMOX and power UMOS/bulk, which are key components for SIMOX intelligent power LSIs, have been developed. A new isolation structure which consists of double buried-oxide layers has been introduced to implement these components on one chip. The concept of the SIMOX power LSI as well as structures, fabrication, and characteristics of the devices are described.
Keywords :
MOS integrated circuits; large scale integration; power integrated circuits; SIMOX intelligent power LSIs; double buried-oxide layers; high-voltage CMOS/SIMOX; isolation structure; low-voltage CMOS/SIMOX; power UMOS/bulk;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890717
