• DocumentCode
    1232084
  • Title

    Electronic properties of thin SiO2 films deposited at low temperatures by new ECR microwave PECVD process

  • Author

    Chau, T.T. ; Kao, K.C.

  • Author_Institution
    Dept. of Electr. Eng., Manitoba Univ., Winnipeg, Man., Canada
  • Volume
    25
  • Issue
    16
  • fYear
    1989
  • Firstpage
    1088
  • Lastpage
    1090
  • Abstract
    Silicon dioxide films of 300-400 AA in thickness have been deposited at 270 degrees C by a new electron cyclotron resonant (ECR) microwave plasma enhanced chemical vapour deposition (PECVD) process. The electronic properties of the deposited films approach those of thermally grown silicon oxides with high stability.
  • Keywords
    dielectric thin films; plasma CVD coatings; plasma radiofrequency heating; semiconductor technology; silicon compounds; sputtered coatings; 270 C; 300 to 400 A; ECR microwave PECVD process; SiO 2 thin films; SiO 2-Si; electronic properties; high stability; plasma enhanced chemical vapour deposition;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890728
  • Filename
    35124
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1232084