• DocumentCode
    1232130
  • Title

    Novel buried heterostructure laser triode for monolithic integration

  • Author

    Shimoyama, Koji ; Inoue, Yasuyuki ; Katoh, Masahiro ; Gotoh, H.

  • Author_Institution
    Thin-Films Lab., Mitsubishi Kasei Co., Ibaraki, Japan
  • Volume
    25
  • Issue
    16
  • fYear
    1989
  • Firstpage
    1096
  • Lastpage
    1097
  • Abstract
    A novel semiconductor laser, the ´T-squared injection buried heterostructure laser triode´ (TI-BHLT), has been successfully fabricated by MOVPE with in situ HCl vapour phase mesa-etching. The laser has been operated with a threshold current of 25 mA by independently injecting electrons into an active region from two n-type embedded regions.
  • Keywords
    semiconductor junction lasers; semiconductor technology; vapour phase epitaxial growth; HCl vapour phase mesa-etching; MOVPE; T-squared injection buried heterostructure laser triode; TI-BHLT; active region; buried heterostructure laser triode; independently injecting electrons; monolithic integration; n-type embedded regions; semiconductor laser; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890733
  • Filename
    35129
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1232130