Title :
Magneto-Transport Physics in Superlattices With Staggered-Bandgap Structure
Author :
Zhang, Weidong ; Woolard, Dwight L.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC
fDate :
6/1/2008 12:00:00 AM
Abstract :
Physical models are presented to describe magneto-transports within double-barrier structure with staggered-band lineups. Here, a special case, where the magnetic field is perpendicular to the heterolayers, is considered and the conduction-band electron current is calculated. In addition, the spatial charge transfer due to the heavyhole (HH) interband tunneling is also studied. The interband tunneling probability is related to the Landau index number, which characterizes the quantization of in-plane electron motions. As a consequence, the inversion of hole populations between Landau levels is shown to occur which is a new phenomenon that has relevance for millimeterwave amplification.
Keywords :
III-V semiconductors; Landau levels; aluminium compounds; conduction bands; energy gap; gallium compounds; galvanomagnetic effects; indium compounds; population inversion; semiconductor heterojunctions; semiconductor superlattices; tunnelling; AlGaSb-InAs; Landau index number; conduction-band electron current; double-barrier structure; heavyhole interband tunneling probability; heterolayers; hole populations; in-plane electron motions; magnetic field; magnetotransport physics; millimeterwave amplification; quantization; spatial charge transfer; staggered-bandgap structure; superlattices; Diodes; Electrons; Frequency; Magnetic fields; Magnetic superlattices; Oscillators; Physics; Quantization; Solid state circuits; Tunneling; Interband tunneling; Landau quantization; magneto-transport; population inversion;
Journal_Title :
Sensors Journal, IEEE
DOI :
10.1109/JSEN.2008.922722