• DocumentCode
    1232160
  • Title

    Computer simulation of boundary condition for Schottky barrier diodes

  • Author

    Tang, T.W.

  • Volume
    25
  • Issue
    16
  • fYear
    1989
  • Firstpage
    1098
  • Lastpage
    1100
  • Abstract
    A computer simulation of a GaAs Schottky barrier diode has been carried out, using a combination of a drift-diffusion equation solver and a Monte Carlo program. In contrast to previous similar reports, the authors found that a variable boundary condition is required, at least when the opposing barrier allows a Monte Carlo simulation to be accurately utilised.
  • Keywords
    III-V semiconductors; Schottky-barrier diodes; digital simulation; gallium arsenide; semiconductor device models; semiconductor-metal boundaries; GaAs; Monte Carlo program; Monte Carlo simulation; Schottky barrier diodes; computer simulation; drift-diffusion equation solver; semiconductors; variable boundary condition;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890735
  • Filename
    35131
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1232160