Component and System Level Studies of Radiation Damage Impact on Reflective Electroabsorption Modulators for Use in HL-LHC Data Transmission

Author

Papadopoulos, Symeon ; El Nasr-Storey, Sarah Seif ; Troska, Jan ; Papakonstantinou, Ioannis ; Vasey, Francois ; Darwazeh, Izzat

Author_Institution

PH Dept., CERN, Geneva, Switzerland

Volume

60

Issue

1

fYear

2013

fDate

Feb. 2013

Firstpage

386

Lastpage

393

Abstract

We investigate the radiation hardness of Reflective Electroabsorption Modulators (REAMs) for fluence levels up to 14 ×10¹⁵ 24 GeV p/cm² to explore the possibility of utilising REAMs for data readout at the High-Luminosity Large Hadron Collider (HL-LHC). The high fluence levels used in the experiment and the online spectral measurements carried out provide significant insight into the radiation damage mechanism. The radiation limits of an architecture based on REAMs are established and compared to LHC and HL-LHC fluence levels.

Keywords

data communication; electroabsorption; modulators; nuclear electronics; optical modulation; radiation hardening (electronics); readout electronics; semiconductor devices; HL-LHC data transmission; HL-LHC fluence levels; High-Luminosity Large Hadron Collider; REAM; data readout; high fluence levels; online spectral measurements; radiation damage impact; radiation damage mechanism; radiation hardness; radiation limits; reflective electroabsorption modulators; Absorption; Current measurement; Leakage current; Modulation; Radiation effects; Temperature measurement; Voltage measurement; Optical links; optoelectronic devices; radiation effects;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2012.2231964

Filename

6412753