Title :
Design of a CMOS readout circuit for wide-temperature range capacitive MEMS sensors
Author :
Yucai Wang ; Chodavarapu, Vamsy P.
Author_Institution :
Dept. of Electr. & Comput. Eng., McGill Univ., Montreal, QC, Canada
Abstract :
We present a capacitance readout interface circuit in bulk CMOS process which is functional at wide temperature range between -55oC to 175oC. The proposed circuit uses a sigma-delta technique to convert capacitance ratio into a digital output and is suitable to provide a high-accuracy digitized output for capacitive MEMS sensors. The circuit is implemented using IBM 0.13μm CMOS technology. Simulation results show that the circuit has excellent stability over wide temperature range, as high as 0.1% accuracy between -55oC to 175oC.
Keywords :
CMOS integrated circuits; capacitive sensors; integrated circuit design; microsensors; readout electronics; IBM technology; bulk CMOS process; capacitance ratio; capacitance readout interface circuit; high-accuracy digitized output; sigma-delta technique; size 0.13 mum; wide-temperature range capacitive MEMS sensors; CMOS integrated circuits; CMOS technology; Capacitance; Capacitive sensors; Temperature distribution; Temperature sensors; Bulk CMOS fabrication; Capacitance sensor; Wide-temperature operation;
Conference_Titel :
Quality Electronic Design (ISQED), 2014 15th International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4799-3945-9
DOI :
10.1109/ISQED.2014.6783400
