Title :
20 ps MESFET sampling gate
Author :
Hafdallah, H. ; Vernet, G. ; Ouslimani, A. ; Adde, R.
Author_Institution :
Inst. d´Electron. Fondamentale, Univ. Paris-Sud, Orsay, France
Abstract :
A high-speed GaAs MESFET sequential sampling gate employing a NEC710 as a resistive switch is designed and the step response is tested. The 10-90% transition duration of the intrinsic step response is 20 ps. Experimental results are analysed using time-domain simulation of the circuit, including propagation effects and measurement equipment responses.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; sample and hold circuits; switching circuits; 20 ps; GaAs; MESFET; intrinsic step response; measurement equipment responses; propagation effects; resistive switch; sequential sampling gate; step response; time-domain simulation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890987
