DocumentCode
1232266
Title
Extremely low threshold operation of 1.5 mu m GaInAsP/InP buried ridge stripe lasers
Author
Charil, J. ; Slempkes, S. ; Robein, D. ; Kazmierski, C. ; Bouley, J.C.
Author_Institution
CNET, Bagneux, France
Volume
25
Issue
22
fYear
1989
Firstpage
1477
Lastpage
1479
Abstract
1.5 mu m Fabry-Perot lasers exhibiting extremely low threshold currents have been obtained with a buried ridge stripe (BRS) structure. Threshold currents are 5.7 and 15.5 mA for 300 mu m and 1 mm cavity lengths, respectively, in CW operation. The optical losses of the buried waveguide have been determined from the external quantum efficiency dependence with cavity length.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; optical losses; semiconductor junction lasers; 1.5 micron; 15.5 mA; 5.7 mA; CW operation; Fabry-Perot lasers; GaInAsP-InP; buried ridge stripe lasers; cavity lengths; external quantum efficiency dependence; low threshold operation; optical losses; threshold currents;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890991
Filename
35144
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