• DocumentCode
    1232384
  • Title

    GaAs integrated Hall sensor with temperature-stabilised characteristics up to 300 degrees C

  • Author

    Itakura, K. ; Ueda, Daisuke ; Hagio, M. ; Kazumura, M.

  • Author_Institution
    Electrn. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
  • Volume
    25
  • Issue
    22
  • fYear
    1989
  • Firstpage
    1493
  • Lastpage
    1495
  • Abstract
    A GaAs integrated Hall sensor with temperature-stabilised characteristics ranging from -50 to 300 degrees C has been developed. The IC features a completely symmetric Schmitt trigger circuit that is essentially independent of the temperature drifts of circuit elements. An experimentally fabricated IC with the new circuit has achieved the highest temperature performance ever reported.
  • Keywords
    Hall effect transducers; III-V semiconductors; gallium arsenide; trigger circuits; -50 to 300 degC; GaAs; completely symmetric Schmitt trigger circuit; integrated Hall sensor; temperature drifts; temperature performance; temperature-stabilised characteristics;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19891002
  • Filename
    35155
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1232384