• DocumentCode
    1232401
  • Title

    AlInAs/GaInAs heterostructure bipolar transistors grown by metalorganic chemical vapour deposition

  • Author

    Jalali, Bahram ; Nottenburg, R.N. ; Hobson, W.S. ; Chen, Y.K. ; Fullowan, T. ; Pearton, S.J. ; Jordan, A.S.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • Volume
    25
  • Issue
    22
  • fYear
    1989
  • Firstpage
    1496
  • Lastpage
    1498
  • Abstract
    Al0.48In0.52As/Ga0.47In0.53As heterostructure bipolar transistors are demonstrated using metalorganic chemical vapour deposition. The transistors have a cutoff frequency of 80 GHz and a common-emitter breakdown voltage of 5.5 V.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; 5.5 V; 80 GHz; Al 0.48In 0.52As-Ga 0.47In 0.53As; EHF; HBT; MOCVD; SHF; common-emitter breakdown voltage; cutoff frequency; heterostructure bipolar transistors; metalorganic chemical vapour deposition; microwave devices; optoelectronic applications;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19891004
  • Filename
    35157
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1232401