DocumentCode
1232468
Title
High-speed 1.55 mu m GaInAsP/InP mass transport laser diode on semi-insulating substrate
Author
Abe, Y. ; Ohishi, T. ; Sugimoto, Hiroshi ; Ohtsuka, K. ; Matsui, Takashi ; Ogata, Hiroaki
Author_Institution
Central Res. Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Volume
25
Issue
22
fYear
1989
Firstpage
1505
Lastpage
1506
Abstract
A high-performance 1.55 mu m GaInAsP/InP mass transport laser diode has been fabricated on a semi-insulating InP substrate to reduce parasitic capacitance at the bonding pad. A small signal 3 dB modulation frequency of 8.5 GHz has been achieved at the light output power of 4 mW.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; laser transitions; optical communication equipment; optical modulation; semiconductor junction lasers; 1.55 micron; 4 mW; 8.5 GHz; GaInAsP-InP; InP; OEIC; high speed operation; high-performance; integrated optoelectronics; light output power; mass transport laser diode; optical communication equipment; parasitic capacitance; semi-insulating substrate; semiconductor lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19891010
Filename
35163
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