Electrical properties of thin reoxidised nitrided interpolyoxides prepared by rapid thermal processing

Author

Cheung, A.W. ; Kwong, D.L.

Author_Institution

Dept. of Electr. & Comput. Eng., Microelectron. Res. Center, Texas Univ., Austin, TX, USA

Volume

25

Issue

22

fYear

1989

Firstpage

1525

Lastpage

1527

Abstract

In the letter ultrathin (150 AA) interpoly oxynitride dielectrics have been fabricated using multiple in situ rapid thermal processing in reactive ambient (NH₃ and O₂). It is found that rapid thermal reoxidation greatly enhances the dielectric strength and charge-to-breakdown of the rapid thermal nitrided oxide samples with an increase in the final film thickness less than 10 AA. Breakdown fields in excess of 11 MV/cm have been obtained.

Keywords

PROM; annealing; capacitors; dielectric thin films; electric strength; integrated circuit technology; integrated memory circuits; metal-insulator-semiconductor devices; metal-insulator-semiconductor structures; oxidation; semiconductor technology; silicon compounds; 10 A; 150 A; NH₃ reactive ambient; O₂ reactive ambient; ONO films; RTN; RTO; RTP; SiO₂-Si₃N₄; SiO_xN_y films; charge-to-breakdown; dielectric strength; film thickness; multiple in situ rapid thermal processing; nitridation; nonvolatile memory; oxidation; oxynitride dielectrics; rapid thermal nitrided oxide; rapid thermal processing; rapid thermal reoxidation; reactive ambient; ultrathin dielectrics;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19891024

Filename

35177