• DocumentCode
    1232643
  • Title

    Submicron AlGaAs/GaAs heterostructure bipolar transistor with high gain

  • Author

    Anzlowar, M. ; Humphrey, D.A. ; Sivco, D. ; Cho, Andrew Y. ; Nottenburg, R.N. ; Levi, A.F.J.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • Volume
    25
  • Issue
    22
  • fYear
    1989
  • Firstpage
    1529
  • Lastpage
    1530
  • Abstract
    Describes the realisation of self-aligned AlGaAs/GaAs heterostructure bipolar transistors with submicron emitter stripe width, current gain of 120 and a maximum operating current density greater than 105 A cm-2. The high current gain was achieved by passivating the extrinsic base region with thin AlGaAs.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; molecular beam epitaxial growth; passivation; semiconductor technology; AlGaAs-GaAs; HBT; current gain; extrinsic base region; heterostructure bipolar transistor; operating current density; passivation; scaling; self-aligned; semiconductors; submicron emitter stripe width;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19891028
  • Filename
    35180
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1232643