• DocumentCode
    1232673
  • Title

    Resistivity of ion beam synthesised CoSi2

  • Author

    Sealy, B.J. ; Tan, B.L. ; Gwilliam, R.M. ; Reeson, K.J. ; Jeynes, C.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Surry Univ., Guildford, UK
  • Volume
    25
  • Issue
    22
  • fYear
    1989
  • Firstpage
    1532
  • Lastpage
    1533
  • Abstract
    Thin layers of cobalt disilicide have been produced by ion beam synthesis and their properties determined via electrical measurements and Rutherford backscattering. Thicknesses of the silicide layers depended on the ion dose and ranged between 900 and 2300 AA. The silicide layers were highly conducting with some sheet resistivities below 1 Omega / Square Operator corresponding to resistivities of 10-15 mu Omega cm.
  • Keywords
    annealing; cobalt compounds; electrical conductivity of crystalline semiconductors and insulators; ion implantation; metallisation; semiconductor technology; 10 to 15 muohmcm; 900 to 2300 AA; Rutherford backscattering; buried silicide layers; electrical measurements; ion beam synthesis; ion dose; resistivities; sheet resistivities; silicide;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19891030
  • Filename
    35182
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1232673