Title :
Resistivity of ion beam synthesised CoSi2
Author :
Sealy, B.J. ; Tan, B.L. ; Gwilliam, R.M. ; Reeson, K.J. ; Jeynes, C.
Author_Institution :
Dept. of Electron. & Electr. Eng., Surry Univ., Guildford, UK
Abstract :
Thin layers of cobalt disilicide have been produced by ion beam synthesis and their properties determined via electrical measurements and Rutherford backscattering. Thicknesses of the silicide layers depended on the ion dose and ranged between 900 and 2300 AA. The silicide layers were highly conducting with some sheet resistivities below 1 Omega / Square Operator corresponding to resistivities of 10-15 mu Omega cm.
Keywords :
annealing; cobalt compounds; electrical conductivity of crystalline semiconductors and insulators; ion implantation; metallisation; semiconductor technology; 10 to 15 muohmcm; 900 to 2300 AA; Rutherford backscattering; buried silicide layers; electrical measurements; ion beam synthesis; ion dose; resistivities; sheet resistivities; silicide;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19891030
