Title :
High-speed AlGaInAs/AlInAs multiple quantum well pin photodiodes
Author :
Wakita, Ken ; Iotaka, I. ; Mogi, K. ; Asai, Hiroki ; Kawamura, Yuriko
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
Abstract :
A new high-speed, waveguided InP-based AlGaInAs/AlInAs multiple quantum well pin photodiode, fabricated by molecular beam epitaxy, is reported. Detectors can be tuned over a range of wavelengths (over 160 nm) using enhanced electro-absorption due to the quantum-confined Stark effect. A response rise time of 40 ps is measured by the subpicosecond impulse response.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical communication equipment; p-i-n diodes; photodiodes; semiconductor quantum wells; tuning; 40 ps; AlGaInAs-AlInAs; QCSE; enhanced electro-absorption; high speed photodiodes; molecular beam epitaxy; multiple quantum well; pin photodiodes; quantum-confined Stark effect; response rise time; semiconductors; subpicosecond impulse response; waveguided photodiodes; wavelength tuning;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19891031
