DocumentCode
1232686
Title
High-speed AlGaInAs/AlInAs multiple quantum well pin photodiodes
Author
Wakita, Ken ; Iotaka, I. ; Mogi, K. ; Asai, Hiroki ; Kawamura, Yuriko
Author_Institution
NTT Opto-Electron. Labs., Kanagawa, Japan
Volume
25
Issue
22
fYear
1989
Firstpage
1533
Lastpage
1534
Abstract
A new high-speed, waveguided InP-based AlGaInAs/AlInAs multiple quantum well pin photodiode, fabricated by molecular beam epitaxy, is reported. Detectors can be tuned over a range of wavelengths (over 160 nm) using enhanced electro-absorption due to the quantum-confined Stark effect. A response rise time of 40 ps is measured by the subpicosecond impulse response.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical communication equipment; p-i-n diodes; photodiodes; semiconductor quantum wells; tuning; 40 ps; AlGaInAs-AlInAs; QCSE; enhanced electro-absorption; high speed photodiodes; molecular beam epitaxy; multiple quantum well; pin photodiodes; quantum-confined Stark effect; response rise time; semiconductors; subpicosecond impulse response; waveguided photodiodes; wavelength tuning;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19891031
Filename
35183
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