Title :
The origin of extended dislocations induced by high-dose ion implantation
Author :
Tsuchiya, Norihiko ; Fujii, Osamu ; Umezawa, Kaori ; Iwase, Masao ; Ushiku, Yukihiro
Author_Institution :
Process & Manuf. Eng. Center, Toshiba Corp., Yokohama, Japan
Abstract :
The origin and the generation mechanism of ion implantation-induced dislocations is investigated with an Si3N4 band line/space pattern. The Si3N4 film-edge stress not only causes dislocation propagation but also causes the formation and deformation of extended dislocations at the initial stage of annealing. The behavior is clarified that the dislocation loops are deformed into pattern-edge dislocation half loops, which accumulate at the film edge and are punched out from the edge.
Keywords :
annealing; arsenic; deformation; dislocation loops; edge dislocations; extended defects; ion implantation; silicon; silicon compounds; Si-SiO2-Si3N4; Si-SiO2:As; Si3N4 band line; Si3N4 film edge stress; Si3N4 space pattern; annealing; dislocation propagation; extended dislocations deformation; ion implantation induced dislocations; pattern edge dislocation half loops; Annealing; Conductive films; Dry etching; Ion implantation; Leakage current; Manufacturing processes; Semiconductor films; Silicon; Stress; Temperature;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
DOI :
10.1109/TSM.2004.841817
