Title :
TCAD Simulation, Small-Signal and Noise Modeling of Si Based Bandgap Engineered Semiconductor Device for Near THz Applications
Author :
Kumar, Pranaw ; Chauhan, R.K. ; Gupta, Madhu
Author_Institution :
Dept. of ECE, ABES Eng. Coll., Ghaziabad, India
Abstract :
In this paper high frequency small-signal model is presented for optimization of device parameters of SiGe HBT with 0.1μm base-width which is based on the technique of direct parameter extraction. For this purpose, we use process simulator ATHENA and device simulator ATLAS from SILAVCO International. Further, a model is proposed to portray the noise in SiGe HBT with uniform Ge concentration in base. The results of the SiGe HBTs are advanced to those of III-V semiconductor devices.
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; semiconductor device models; semiconductor device noise; silicon; technology CAD (electronics); terahertz wave devices; ATHENA process simulator; ATLAS device simulator; III-V semiconductor devices; SILAVCO International; Si-Ge; TCAD simulation; device parameter optimization; direct parameter extraction; germanium concentration; high-frequency small-signal model; near-THz application; noise modeling; silicon-based bandgap engineered semiconductor device; silicon-germanium HBT; Capacitance; Heterojunction bipolar transistors; Junctions; Mathematical model; Noise; Resistance; Silicon germanium; Ge; Si; SiGe HBT; cut-off frequency; noise figure;
Conference_Titel :
Advanced Computing & Communication Technologies (ACCT), 2014 Fourth International Conference on
Conference_Location :
Rohtak
DOI :
10.1109/ACCT.2014.47
