Study of the step coverage and contact resistance by using two-step TiN barrier and evolve simulation

Device aspect ratios and dimensions at the contact and via levels for old and new technologies are driving PVD/WCVD-based metallization to its full limit at integrated circuits (ICs) fabrication sites (Wilson et al., 1993). Contact and via This work describes the work performed at ST Microelectronics regarding the TiN barrier film properties with respect to process variables. Single-step and dual-step TiN barrier processes were studied for contact and via step coverage profiles used for aluminum and tungsten plug technologies. Electrical contact resistance values were evaluated using single and dual step TiN barrier processes. EVOLVE, a topography simulation program was used to study the step coverages and deposited film profiles for single and dual steps TiN barrier processes. In this work we prove that dual step TiN barrier process is superior to single step TiN barrier process in terms of step coverage, current leakage, film stress and contact resistance values.