Title :
Intraband relaxation time in quantum-well lasers
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
fDate :
9/1/1989 12:00:00 AM
Abstract :
Intraband relaxation time, which causes spectral broadening of optical gain and spontaneous emission spectra, is estimated theoretically for quantum-well lasers. Carrier-carrier and carrier-longitudinal-optical (LO) phonon scattering mechanisms are considered, and it is shown that hole-hole, electron-hole, and hole-LO phonon scattering are dominant in spectral broadening. Intraband relaxation time determined by all of these mechanisms increases slightly with the decrease of well width. The dependence of intraband relaxation time on temperature, carrier density, and energy of electron and hole is also shown. Spectral line shape is discussed as an extension of the above calculation, and an approximated formula is given
Keywords :
III-V semiconductors; carrier density; carrier relaxation time; electron-phonon interactions; semiconductor junction lasers; spectral line breadth; carrier density; carrier-carrier; carrier-longitudinal-optical; electron energy; electron-hole; hole energy; hole-hole; hole-longitudinal optical; intraband relaxation time; optical gain spectra; phonon scattering mechanisms; quantum-well lasers; semiconductor lasers; spectral broadening; spectral line shape; spontaneous emission spectra; temperature; well width; Charge carrier density; Charge carrier processes; Estimation theory; Optical scattering; Particle scattering; Phonons; Quantum well lasers; Spontaneous emission; Stimulated emission; Temperature dependence;
Journal_Title :
Quantum Electronics, IEEE Journal of
