Intraband relaxation time in quantum-well lasers

Author

Asada, Masahiro

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan

Volume

25

Issue

9

fYear

1989

fDate

9/1/1989 12:00:00 AM

Firstpage

2019

Lastpage

2026

Abstract

Intraband relaxation time, which causes spectral broadening of optical gain and spontaneous emission spectra, is estimated theoretically for quantum-well lasers. Carrier-carrier and carrier-longitudinal-optical (LO) phonon scattering mechanisms are considered, and it is shown that hole-hole, electron-hole, and hole-LO phonon scattering are dominant in spectral broadening. Intraband relaxation time determined by all of these mechanisms increases slightly with the decrease of well width. The dependence of intraband relaxation time on temperature, carrier density, and energy of electron and hole is also shown. Spectral line shape is discussed as an extension of the above calculation, and an approximated formula is given

Keywords

III-V semiconductors; carrier density; carrier relaxation time; electron-phonon interactions; semiconductor junction lasers; spectral line breadth; carrier density; carrier-carrier; carrier-longitudinal-optical; electron energy; electron-hole; hole energy; hole-hole; hole-longitudinal optical; intraband relaxation time; optical gain spectra; phonon scattering mechanisms; quantum-well lasers; semiconductor lasers; spectral broadening; spectral line shape; spontaneous emission spectra; temperature; well width; Charge carrier density; Charge carrier processes; Estimation theory; Optical scattering; Particle scattering; Phonons; Quantum well lasers; Spontaneous emission; Stimulated emission; Temperature dependence;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.35228

Filename

35228