DocumentCode :
1233194
Title :
Research coordination for power semiconductor technology
Author :
Hingorani, Narain G. ; Mehta, Harshad ; Levy, Stephen ; Temple, Victor A K ; Glascock, Homer H.
Author_Institution :
Electr. Power Res. Inst., Palo Alto, CA, USA
Volume :
77
Issue :
9
fYear :
1989
fDate :
9/1/1989 12:00:00 AM
Firstpage :
1376
Lastpage :
1389
Abstract :
The National Power Semiconductor Interagency/Utility Consortium has been formed to coordinate US research activities for development of materials and technologies related to high-power semiconductors. The history, activities, and investment strategy of this consortium are described briefly. The most promising power electronics devices considered by the consortium are discussed, leading to the conclusion that field-effect transistors and metal-oxide semiconductor (MOS) controlled thyristors (MCTs) will eventually dominate power-switching applications. New packaging techniques are also presented, in which silicon is used to replace bulky ceramic insulators and copper contacts, an arrangement that promises to lower costs and weight while improving device performance and life. Finally, the authors review policy issues related to power semiconductor research and recommend that R&D in this field be treated as a leading national priority
Keywords :
field effect transistors; metal-insulator-semiconductor devices; research and development management; semiconductor technology; thyristors; MCTs; MOS controlled thyristors; National Power Semiconductor Interagency/Utility Consortium; R&D; US research activities; costs; device performance; field-effect transistors; high-power semiconductors; history; investment; packaging techniques; power semiconductor technology; power-switching applications; weight; Electronics packaging; FETs; History; Investments; Lead compounds; MOS devices; Power electronics; Semiconductor device packaging; Semiconductor materials; Thyristors;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/5.35242
Filename :
35242
Link To Document :
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