Title :
Nonlinear design procedures for single-frequency and broad-band GaAs MESFET power amplifiers
Author :
Brazil, Thomas J. ; Scanlan, Sean O.
Author_Institution :
Dept. of Electron. Eng., Univ. Coll., Dublin, Ireland
fDate :
2/1/1988 12:00:00 AM
Abstract :
The design and optimization of MESFET power amplifiers are investigated using an intermediate-level (functional) device modeling approach. The approximations involved are discussed, together with considerations of required circuit terminations at harmonic frequencies. Three variations of the approach, based on large-signal admittance, scattering, and hybrid parameters, are compared in the design of a single-frequency amplifier, and the method is extended to broadband power amplifier design. In all cases, results are validated by comparison with a full time-domain large-signal amplifier analysis, involving realistic, distributed external circuits
Keywords :
III-V semiconductors; S-parameters; Schottky gate field effect transistors; gallium arsenide; microwave amplifiers; nonlinear network synthesis; power amplifiers; solid-state microwave circuits; wideband amplifiers; GaAs; III-V semiconductors; MESFET; approximations; broadband amplifiers; circuit terminations; functional device modelling; harmonic frequencies; hybrid parameters; large-signal admittance; microwave circuits; nonlinear design procedures; optimization; power amplifiers; scattering; single-frequency; single-frequency amplifier; Admittance; Broadband amplifiers; Circuits; Design optimization; Distributed amplifiers; Frequency; MESFETs; Power amplifiers; Scattering parameters; Time domain analysis;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
