Investigations of Indium Tin Oxide—Barium Strontium Titanate–Indium Tin Oxide Heterostructure for Tunability

Author

Al Ahmad, Mahmoud ; Salvagnac, Ludovic ; Michau, Dominique ; Maglione, Mario ; Plana, Robert

Author_Institution

LAAS CNRS, Univ. of Touluse, Toulouse

Volume

18

Issue

6

fYear

2008

fDate

6/1/2008 12:00:00 AM

Firstpage

398

Lastpage

400

Abstract

This letter reports for the first time the interesting behavior of the interface between indium tin oxide (ITO) as a high resistive electrode and barium strontium titanate tunable paraelectric thin film material. The interface is consisting of barium strontium titanate (BST) thin film dielectric material sandwiched between two ITO high resistive layers, all are integrated above glass substrate. When dc field is applied between the ITO layers, the BST thin film material properties are tuned. It is found that the ITO/BST/ITO heterostructure exhibits a tunable resistor performance. To our knowledge; these results are never reported.

Keywords

barium compounds; dielectric materials; dielectric thin films; indium compounds; resistors; strontium compounds; ITO-BaSrTiO₃-ITO; agile components; glass substrate; indium tin oxide-barium strontium titanate-indium tin oxide heterostructure; paraelectric thin film material; resistive electrode; resistive layers; tunable resistor; Agile components; barium strontium titanate (BST); characterization; distributed tuning; indium tin oxide (ITO); matching circuits; material parameters; metamaterial; thin film; tunability; tunable circuit; tunable resistor;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2008.922631

Filename

4530631