Title :
Investigations of Indium Tin Oxide—Barium Strontium Titanate–Indium Tin Oxide Heterostructure for Tunability
Author :
Al Ahmad, Mahmoud ; Salvagnac, Ludovic ; Michau, Dominique ; Maglione, Mario ; Plana, Robert
Author_Institution :
LAAS CNRS, Univ. of Touluse, Toulouse
fDate :
6/1/2008 12:00:00 AM
Abstract :
This letter reports for the first time the interesting behavior of the interface between indium tin oxide (ITO) as a high resistive electrode and barium strontium titanate tunable paraelectric thin film material. The interface is consisting of barium strontium titanate (BST) thin film dielectric material sandwiched between two ITO high resistive layers, all are integrated above glass substrate. When dc field is applied between the ITO layers, the BST thin film material properties are tuned. It is found that the ITO/BST/ITO heterostructure exhibits a tunable resistor performance. To our knowledge; these results are never reported.
Keywords :
barium compounds; dielectric materials; dielectric thin films; indium compounds; resistors; strontium compounds; ITO-BaSrTiO3-ITO; agile components; glass substrate; indium tin oxide-barium strontium titanate-indium tin oxide heterostructure; paraelectric thin film material; resistive electrode; resistive layers; tunable resistor; Agile components; barium strontium titanate (BST); characterization; distributed tuning; indium tin oxide (ITO); matching circuits; material parameters; metamaterial; thin film; tunability; tunable circuit; tunable resistor;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2008.922631
