A V-Band Monolithic AlGaN/GaN VCO

Author

Lan, X. ; Wojtowicz, M. ; Truong, M. ; Fong, F. ; Kintis, M. ; Heying, B. ; Smorchkova, I. ; Chen, Y.C.

Author_Institution

Space Technol. Group, Northrop Grumman Corp., Redondo Beach, CA

Volume

18

Issue

6

fYear

2008

fDate

6/1/2008 12:00:00 AM

Firstpage

407

Lastpage

409

Abstract

A V-band push-push GaN monolithic microwave integrated circuit voltage controlled oscillator (VCO) has been realized based on a 0.2 mum T-gate AlGaN/GaN high electron mobility transistor technology with an fT ~ 65 GHz. The GaN VCO delivered an output power of +11 dBm at 53 GHz with an estimated phase noise of -97 dBc/Hz at 1 MHz offset based on on-wafer measurement. To the best of our knowledge, this is the highest frequency VCO ever reported for GaN technology with a high output power at V-band, without using any buffer amplifier. This work demonstrates the potential of applying GaN technology to millimeter wave band, high power, and low phase noise frequency sources applications.

Keywords

MMIC; aluminium compounds; high electron mobility transistors; voltage-controlled oscillators; AlGaN; T-gate; V-band monolithic VCO; high electron mobility transistor technology; monolithic microwave integrated circuit; on-wafer measurement; size 0.2 mum; voltage controlled oscillator; Gallium nitride; monolithic microwave integrated circuit (MMIC) oscillator; phase noise;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2008.922660

Filename

4530638