Title :
An improved interpretation of depletion approximation in p-n-junctions
Author :
Mazhari, B. ; Mahajan, A.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Kanpur, India
Abstract :
The conventional treatment of depletion approximation in p-n-junctions often leaves a student with an erroneous impression that the approximation essentially involves complete neglect of the fraction of the space charge region (SCR) where charge density makes a transition to zero. This work describes a simple analytical model for clarifying the relationship of depletion approximation to the SCR.
Keywords :
approximation theory; capacitance; electric fields; p-n junctions; semiconductor device models; space charge; charge density; depletion approximation interpretation; electric field; p-n-junctions; semiconductor device modeling; space charge region; Analytical models; Breakdown voltage; Capacitance; FETs; Poisson equations; Semiconductor device modeling; Semiconductor devices; Semiconductor diodes; Space charge; Thyristors;
Journal_Title :
Education, IEEE Transactions on
DOI :
10.1109/TE.2004.832876
