Title :
AIN/GaN insulated gate HEMTs with HfO2 gate dielectric
Author :
Deen, D.A. ; Binari, S.C. ; Storm, D.F. ; Katzer, D.S. ; Roussos, J.A. ; Hackley, J.C. ; Gougousi, T.
Author_Institution :
Microelectron. Div., Naval Res. Lab., Washington, DC
Abstract :
AlN/GaN single heterojunction MOS-HEMTs grown by molecular beam epitaxy have been fabricated utilising HfO2 high-K dielectrics deposited by atomic layer deposition. Typical DC transfer characteristics of 1.3 m gate length devices show a maximum drain current of 950 mA/mm and a transconductance of 210 mS/mm with gate currents of 5 A/mm in pinch-off. Unity gain cutoff frequencies, ft and f max, were measured to be 9 and 32 GHz, respectively.
Keywords :
MOS integrated circuits; aluminium compounds; atomic layer deposition; gallium compounds; hafnium compounds; high electron mobility transistors; AlN-GaN; HfO2; atomic layer deposition; frequency 32 GHz; frequency 9 GHz; gate dielectric; high-K dielectrics; insulated gate HEMT; single heterojunction MOS-HEMT; size 1.3 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2009.3688
