First On-Wafer Power Characterization of MMIC Amplifiers at Sub-Millimeter Wave Frequencies

Author

Fung, A.K. ; Gaier, T. ; Samoska, L. ; Deal, W.R. ; Radisic, V. ; Mei, X.B. ; Yoshida, W. ; Liu, P.-S. ; Uyeda, J. ; Barsky, M. ; Lai, R.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA

Volume

18

Issue

6

fYear

2008

fDate

6/1/2008 12:00:00 AM

Firstpage

419

Lastpage

421

Abstract

We present on-wafer power measurements of 35 nm gate length InP HEMT amplifiers at 330 GHz. Various amplifiers are examined. The maximum output power of 1.78 mW is measured from a three stage amplifier. Additional output power may be possible but limited by our input power source level to saturate amplifiers. This result is the highest frequency on-wafer power measurement we are aware of reported to date, and demonstrates the technique we utilize to be a fast method of evaluating power performance of submillimeter wave amplifiers without the need to package devices.

Keywords

HEMT integrated circuits; MMIC amplifiers; power measurement; HEMT amplifiers; InP; MMIC amplifiers; on-wafer power characterization; on-wafer power measurement; package devices; power performance; submillimeter wave amplifiers; submillimeter wave frequencies; Amplifier; MM-Wave; monolithic microwave integrated circuit (MMIC); power measurement;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2008.922713

Filename

4530748