Sulfur-Induced PtSi:C/Si:C Schottky Barrier Height Lowering for Realizing N-Channel FinFETs With Reduced External Resistance

Author

Lee, Rinus Tek-Po ; Lim, Andy Eu-Jin ; Tan, Kian-Ming ; Liow, Tsung-Yang ; Chi, Dong Zhi ; Yeo, Yee-Chia

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore

Volume

30

Issue

5

fYear

2009

fDate

5/1/2009 12:00:00 AM

Firstpage

472

Lastpage

474

Abstract

In this letter, sulfur (S) segregation was exploited to attain a record-low electron barrier height (Phi_B ^N) of 110 meV for platinum-based silicide contacts. Sulfur-incorporated PtSi:C/Si:C contacts were also demonstrated in strained FinFETs with Si:C source/drain stressors. Incorporation of sulfur at the PtSi:C/Si:C interface in the source/drain regions of FinFETs provides a 51% improvement in external resistances and a 45% enhancement in drive current as compared to devices without S segregation. The remarkable reduction in Phi_B ^N is explained using charge transfer and dipole formation at the silicide/semiconductor interface with S segregation.

Keywords

MOSFET; Schottky barriers; platinum compounds; silicon compounds; sulphur; PtSi:C-Si:C; charge transfer; dipole formation; n-channel FinFET; platinum-based silicide contacts; reduced external resistance; silicide/semiconductor interface; source/drain stressors; sulfur segregation; sulfur-incorporated contacts; sulfur-induced Schottky barrier; External resistance; FinFET; Schottky barrier; platinum silicide; silicon carbon; sulfur;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2017213

Filename

4813207