DocumentCode :
1233898
Title :
Modeling random telegraph noise under switched bias conditions using cyclostationary RTS noise
Author :
Van Der Wel, Arnoud P. ; Klumperink, Eric A M ; Vandamme, L.K.J. ; Nauta, Bram
Author_Institution :
IC-Design Group, Univ. of Twente, Enschede, Netherlands
Volume :
50
Issue :
5
fYear :
2003
fDate :
5/1/2003 12:00:00 AM
Firstpage :
1378
Lastpage :
1384
Abstract :
In this paper, we present measurements and simulation of random telegraph signal (RTS) noise in n-channel MOSFETs under periodic large signal gate-source excitation (switched bias conditions). This is particularly relevant to analog CMOS circuit design where large signal swings occur and where LF noise is often a limiting factor in the performance of the circuit. Measurements show that, compared to steady-state bias conditions, RTS noise can decrease but also increase when the device is subjected to switched bias conditions. We show that the simple model of a stationary noise generating process whose output is modulated by the bias voltage is not sufficient to explain the switched bias measurement results. Rather, we propose a model based on cyclostationary RTS noise generation. Using our model, we can correctly model a variety of different types of LF noise behavior that different MOSFETs exhibit under switched bias conditions. We show that the measurement results can be explained using realistic values for the bias dependency of τc and τe.
Keywords :
CMOS analogue integrated circuits; MOSFET; integrated circuit noise; semiconductor device measurement; semiconductor device models; semiconductor device noise; switching; LF noise; analog CMOS circuit design; cyclostationary RTS noise generation; n-channel MOSFETs; periodic large signal gate-source excitation; random telegraph noise modeling; switched bias conditions; CMOS analog integrated circuits; Circuit noise; Circuit simulation; Circuit synthesis; Low-frequency noise; MOSFETs; Noise generators; Noise measurement; Semiconductor device modeling; Telegraphy;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2003.813247
Filename :
1210799
Link To Document :
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