Temperature-dependent characteristics of polysilicon and diffused resistors

Author

Chuang, Hung-Ming ; Thei, Kong-Beng ; Tsai, Sheng-Fu ; Liu, Wen-Chau

Author_Institution

Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan

Volume

50

Issue

5

fYear

2003

fDate

5/1/2003 12:00:00 AM

Firstpage

1413

Lastpage

1415

Abstract

The temperature-dependent characteristics of polysilicon and diffused resistors have been studied. By using 0.18-μm CMOS technology, a cobalt salicide process is employed and silicide is formed at the ends of resistors. Based on a simple and useful model, some important parameters of resistors including bulk sheet resistance (R_bulk) and interface resistance (R_interface) are obtained at different temperature. For diffused resistors, the R_bulk and R_interface values increase and decrease with increase of temperature, respectively. Positive values of temperature coefficient of resistance (TCR) are observed. Furthermore, TCR values decrease with decreasing resistor size. For polysilicon resistors, the R_interface values decrease with increase of temperature. In addition, negative and positive TCR values of R_bulk are found in n⁺ and p⁺ polysilicon resistors, respectively. In conclusion, by comparing the studied diffused and polysilicon resistors, negative trends of TCR are observed when the resistor size decreases.

Keywords

CMOS integrated circuits; contact resistance; integrated circuit measurement; integrated circuit modelling; resistors; 0.18 micron; 0.18-μm CMOS technology; 25 to 150 C; CoSi₂-Si; bulk sheet resistance; cobalt salicide process; diffused resistors; interface resistance; negative TCR; polysilicon resistors; positive TCR; resistor parameters; resistor size; silicide formation; temperature coefficient of resistance; temperature-dependent characteristics; CMOS process; CMOS technology; Circuits; Cobalt; Electrostatic discharge; Implants; Resistors; Silicides; Silicon; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2003.813472

Filename

1210814