Title :
Temperature-dependent characteristics of polysilicon and diffused resistors
Author :
Chuang, Hung-Ming ; Thei, Kong-Beng ; Tsai, Sheng-Fu ; Liu, Wen-Chau
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan
fDate :
5/1/2003 12:00:00 AM
Abstract :
The temperature-dependent characteristics of polysilicon and diffused resistors have been studied. By using 0.18-μm CMOS technology, a cobalt salicide process is employed and silicide is formed at the ends of resistors. Based on a simple and useful model, some important parameters of resistors including bulk sheet resistance (Rbulk) and interface resistance (Rinterface) are obtained at different temperature. For diffused resistors, the Rbulk and Rinterface values increase and decrease with increase of temperature, respectively. Positive values of temperature coefficient of resistance (TCR) are observed. Furthermore, TCR values decrease with decreasing resistor size. For polysilicon resistors, the Rinterface values decrease with increase of temperature. In addition, negative and positive TCR values of Rbulk are found in n+ and p+ polysilicon resistors, respectively. In conclusion, by comparing the studied diffused and polysilicon resistors, negative trends of TCR are observed when the resistor size decreases.
Keywords :
CMOS integrated circuits; contact resistance; integrated circuit measurement; integrated circuit modelling; resistors; 0.18 micron; 0.18-μm CMOS technology; 25 to 150 C; CoSi2-Si; bulk sheet resistance; cobalt salicide process; diffused resistors; interface resistance; negative TCR; polysilicon resistors; positive TCR; resistor parameters; resistor size; silicide formation; temperature coefficient of resistance; temperature-dependent characteristics; CMOS process; CMOS technology; Circuits; Cobalt; Electrostatic discharge; Implants; Resistors; Silicides; Silicon; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2003.813472
