Metal-Gate FinFET Variation Analysis by Measurement and Compact Model

Author

O´Uchi, Shin´Ichi ; Matsukawa, Takashi ; Nakagawa, Tadashi ; Endo, Kazuhiko ; Liu, Yongxun ; Sekigawa, Toshihiro ; Tsukada, Junichi ; Ishikawa, Yuki ; Yamauchi, Hiromi ; Ishii, Kenichi ; Suzuki, Eiichi ; Koike, Hanpei ; Sakamoto, Kunihiro ; Masahara, Meis

Author_Institution

Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba

Volume

30

Issue

5

fYear

2009

fDate

5/1/2009 12:00:00 AM

Firstpage

556

Lastpage

558

Abstract

A compact model (CM) for fin-type FETs (FinFETs) was successfully developed and applied to variability analysis of a fabricated state-of-the-art metal-gate (MG) FinFET. By combining the statistical measurements with the CM calibration, V _th variation was, for the first time, broken down into structure-based (silicon fin thickness and gate length) and material-based (gate work function) components. As a result, the measured variation of MG FinFET performance was successfully reproduced by the CM. Characterization using the CM with the measured statistical data provides insight on the gate work function variation of 16 meV in short-channel molybdenum (Mo) gate FinFETs.

Keywords

MOSFET; statistical analysis; compact model; fin-type FET; gate work function; metal-gate FinFET variation analysis; short-channel molybdenum; silicon fin thickness; statistical data; statistical measurements; Calibration; FinFET; compact model (CM); gate work function; metal gate (MG); variation;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2016769

Filename

4813224