Title :
Frequency conversion of optical signals in p-i-n photodiodes
Author :
Malyshev, Sergei A. ; Galwas, Bogdan A. ; Chizh, Alexander L. ; Dawidczyk, Jaroslaw ; Andrievski, Vatslav F.
Author_Institution :
Lab. of Semicond. Optoelectron., Nat. Acad. of Sci. of Belarus, Minsk
Abstract :
A planar InGaAsP/InGaAs/InGaAsP p-i-n photodiode has been fabricated and used for frequency conversion of two optical signals. Nonlinear properties of the photodiode have been investigated. It is shown that photodiode responsivity R(V) dependence on bias voltage can be characterized by a parameter of the nonlinearity A, which is equal to R(V)middotR´(V) and the maximal conversion efficiency is achieved at the bias voltage where the parameter A has the maximal value
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; multiwave mixing; optical frequency conversion; p-i-n photodiodes; semiconductor epitaxial layers; InGaAsP-InGaAs-InGaAsP; bias voltage; frequency conversion; maximal conversion efficiency; nonlinear properties; optical signals; photodiode responsivity; planar InGaAsP-InGaAs-InGaAsP p-i-n photodiode; Fiber nonlinear optics; Frequency conversion; Indium gallium arsenide; Nonlinear optics; Optical mixing; Optical modulation; Optical receivers; PIN photodiodes; Signal processing; Voltage; Optoelectronic mixing; p-i-n photodiode;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2004.840774
