An Ultra-Wide-Band 0.4–10-GHz LNA in 0.18-μm CMOS

Author

Chen, Ke-Hou ; Lu, Jian-Hao ; Chen, Bo-Jiun ; Liu, Shen-Iuan

Author_Institution

Graduate Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei

Volume

54

Issue

3

fYear

2007

fDate

3/1/2007 12:00:00 AM

Firstpage

217

Lastpage

221

Abstract

A two-stage ultra-wide-band CMOS low-noise amplifier (LNA) is presented. With the common-gate configuration employed as the input stage, the broad-band input matching is obtained and the noise does not rise rapidly at higher frequency. By combining the common-gate and common-source stages, the broad-band characteristic and small area are achieved by using two inductors. This LNA has been fabricated in a 0.18-mum CMOS process. The measured power gain is 11.2-12.4 dB and noise figure is 4.4-6.5 dB with -3-dB bandwidth of 0.4-10 GHz. The measured IIP3 is -6 dBm at 6 GHz. It consumes 12 mW from a 1.8-V supply voltage and occupies only 0.42 mm²

Keywords

CMOS integrated circuits; inductors; low noise amplifiers; ultra wideband technology; wideband amplifiers; 0.18 micron; 0.4 to 10 GHz; 1.8 V; 11.2 to 12.4 dB; 12 mW; 4.4 to 6.5 dB; UWB LNA; broadband input matching; common-gate configuration; common-source stage; inductors; noise figure; power gain; ultrawideband CMOS low-noise amplifier; CMOS process; Frequency; Gain measurement; Impedance matching; Inductors; Low-noise amplifiers; Noise figure; Noise measurement; Power measurement; Ultra wideband technology; Common-gate configuration; ultra-wide-band (UWB) CMOS low-noise amplifier (LNA);

fLanguage

English

Journal_Title

Circuits and Systems II: Express Briefs, IEEE Transactions on

Publisher

ieee

ISSN

1549-7747

Type

jour

DOI

10.1109/TCSII.2006.886880

Filename

4132952